Invention Grant
US09257582B2 Photodetectors and photovoltaics based on semiconductor nanocrystals
有权
基于半导体纳米晶体的光电检测器和光伏
- Patent Title: Photodetectors and photovoltaics based on semiconductor nanocrystals
- Patent Title (中): 基于半导体纳米晶体的光电检测器和光伏
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Application No.: US14456214Application Date: 2014-08-11
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Publication No.: US09257582B2Publication Date: 2016-02-09
- Inventor: Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
- Applicant: InVisage Technologies, Inc.
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L31/0352 ; B82Y20/00 ; B82Y30/00 ; H01L31/032 ; H01L31/0384 ; H01L31/07

Abstract:
A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
Public/Granted literature
- US20150144879A1 PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2015-05-28
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