Invention Grant
- Patent Title: Photocoupler semiconductor device
- Patent Title (中): 光电耦合器半导体器件
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Application No.: US13845287Application Date: 2013-03-18
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Publication No.: US09257591B2Publication Date: 2016-02-09
- Inventor: Toshiyuki Kotani
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2012-187624 20120828
- Main IPC: H01L31/16
- IPC: H01L31/16 ; H01L31/173 ; H01L31/167

Abstract:
According to an embodiment, a semiconductor device includes a primary side lead, a light-emitting element electrically connected to the primary side lead, and a thyristor-type light-receiving element. The light-receiving element includes a first face for detecting light emitted from the light-emitting element, and a second face provided on an opposite side of the first face. The light-receiving element includes an anode electrode, a cathode electrode, and a gate electrode that are provided on the first face. The device further includes a secondary side first lead electrically connected to the anode electrode, a secondary side second lead electrically connected to the cathode electrode, and a secondary side third lead electrically connected to the gate electrode. The secondary side third lead is connected to the second face of the light-receiving element.
Public/Granted literature
- US20140061678A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-06
Information query
IPC分类: