Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US14541151Application Date: 2014-11-14
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Publication No.: US09257603B2Publication Date: 2016-02-09
- Inventor: Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201010192156 20100604
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/20 ; H01L33/02

Abstract:
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The first semiconductor layer has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure.
Public/Granted literature
- US20150069446A1 LIGHT EMITTING DIODE Public/Granted day:2015-03-12
Information query
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