Invention Grant
- Patent Title: Direct bandgap substrates and methods of making and using
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Application No.: US13890611Application Date: 2013-05-09
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Publication No.: US09257606B2Publication Date: 2016-02-09
- Inventor: Vincent Wing-Ho Lee , Ioannis Kymissis
- Applicant: The Trustees of Columbia University in the City of New York
- Applicant Address: US NY New York
- Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee Address: US NY New York
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L33/26
- IPC: H01L33/26 ; H04N9/31 ; H01L33/00

Abstract:
An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.
Public/Granted literature
- US20130240880A1 DIRECT BANDGAP SUBSTRATES AND METHODS OF MAKING AND USING Public/Granted day:2013-09-19
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