Invention Grant
US09257617B2 Wavelength converted light emitting device 有权
波长转换发光器件

Wavelength converted light emitting device
Abstract:
Embodiments of the invention include a semiconductor structure including a light emitting layer. The semiconductor structure is attached to a support such that the semiconductor structure and the support are mechanically self-supporting. A wavelength converting material extends over the sides of the semiconductor structure and the support. In some embodiments, a thickness of the wavelength converting material on a side of the semiconductor structure is at least 25% of a thickness of the wavelength converting material over a top of the semiconductor structure.
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