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US09257637B2 Method of manufacturing MRAM memory elements 有权
制造MRAM存储元件的方法

  • Patent Title: Method of manufacturing MRAM memory elements
  • Patent Title (中): 制造MRAM存储元件的方法
  • Application No.: US14170645
    Application Date: 2014-02-03
  • Publication No.: US09257637B2
    Publication Date: 2016-02-09
  • Inventor: Yimin Guo
  • Applicant: Yimin Guo
  • Agency: 5Suns
  • Agent Yuanhui Huang
  • Main IPC: H01L43/12
  • IPC: H01L43/12 ;  H01L43/02
Method of manufacturing MRAM memory elements
Abstract:
A STT-MRAM comprises a method to form magnetic random access memory (MRAM) element array having ultra small dimensions using double photo exposures and etch of their hard masks. The memory cells are located at the cross section of two ultra-narrow photo-resist lines suspended between two large photo-resist bases. Array of MRAM cells with small dimension is formed by a third magnetic etch.
Abstract(Chinese):

STT-MRAM包括使用双重曝光和其硬掩模的蚀刻来形成具有超小尺寸的磁性随机存取存储器（MRAM）元件阵列的方法。 存储单元位于悬挂在两个大光抗蚀基底之间的两个超窄光致抗蚀剂线的横截面上。 具有小尺寸的MRAM单元的阵列通过第三磁性蚀刻形成。

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