Invention Grant
- Patent Title: Method to etch non-volatile metal materials
- Patent Title (中): 蚀刻非挥发性金属材料的方法
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Application No.: US14325190Application Date: 2014-07-07
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Publication No.: US09257638B2Publication Date: 2016-02-09
- Inventor: Samantha S.H. Tan , Wenbing Yang , Meihua Shen , Richard P. Janek , Jeffrey Marks , Harmeet Singh , Thorsten Lill
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12 ; H01L43/02 ; H01L43/10
Abstract:
A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.
Public/Granted literature
- US20150280113A1 METHOD TO ETCH NON-VOLATILE METAL MATERIALS Public/Granted day:2015-10-01
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