Invention Grant
- Patent Title: Semiconductor device and power supply device
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Application No.: US14695517Application Date: 2015-04-24
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Publication No.: US09258859B2Publication Date: 2016-02-09
- Inventor: Ryosei Makino , Kenichi Yokota , Tomohiro Tazawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2010-122971 20100528; JP2010-257090 20101117
- Main IPC: H05B33/08
- IPC: H05B33/08 ; H02M1/42

Abstract:
A power supply topology is used in which a transistor is provided on the side of an output node of a rectifying circuit. An inductor is provided on the side of a reference node, a resistor is inserted between the transistor and the inductor, and one end of the resistor is coupled to a ground power supply voltage of a PFC circuit. The PFC circuit includes a square circuit which squares a result of multiplication of an input voltage detection signal and feedback information (output voltage of an error amplifier circuit). The PFC circuit drives on the transistor when a detection voltage developed at the resistor reaches zero, and drives off the transistor when the detection signal reaches an output signal of the square circuit.
Public/Granted literature
- US20150230304A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE Public/Granted day:2015-08-13
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