Invention Grant
- Patent Title: Technique for forming a MEMS device
- Patent Title (中): 用于形成MEMS器件的技术
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Application No.: US14494688Application Date: 2014-09-24
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Publication No.: US09260290B2Publication Date: 2016-02-16
- Inventor: Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Abel Law Group, LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; G01C19/5712

Abstract:
An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.
Public/Granted literature
- US20150008545A1 TECHNIQUE FOR FORMING A MEMS DEVICE Public/Granted day:2015-01-08
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