Invention Grant
US09260290B2 Technique for forming a MEMS device 有权
用于形成MEMS器件的技术

Technique for forming a MEMS device
Abstract:
An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.
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