The programming of programmable memory devices, e.g. one-time programmable (OTP) memory device is presented. In particular, efficient methods and systems for generating the supply voltage for programming a programmable memory device are described. A controller configured to control the programming of a data word into a programmable memory device is described. The controller is configured to set one or more digital control signals for programming the data word into the programmable memory device. Furthermore, the controller is configured to, subsequent to setting the one or more digital control signals, increasing a device supply voltage for the programmable memory device from a default operation level to a programming level.