Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14184566Application Date: 2014-02-19
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Publication No.: US09263104B2Publication Date: 2016-02-16
- Inventor: Yoshinori Matsui
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-033131 20130222
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C11/4076 ; G11C11/4097

Abstract:
Disclosed herein is an apparatus that includes: a first terminal configured to receive a serial write data signal that includes at least four bits transferred in series with each other; a second terminal configured to receive a data strobe signal; a control circuit configured to produce a plurality of internal data strobe signals in response to the data strobe signal; and a serial-to-parallel conversion circuit configured to respond to the data strobe and internal data strobe signals to convert the serial write data signal into a parallel write data signal that includes at least four bits produced in parallel to each other.
Public/Granted literature
- US20140241073A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-08-28
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