Invention Grant
US09263231B2 Moveable current sensor for increasing ion beam utilization during ion implantation
有权
可移动电流传感器，用于增加离子注入期间的离子束利用率
- Patent Title: Moveable current sensor for increasing ion beam utilization during ion implantation
- Patent Title (中): 可移动电流传感器，用于增加离子注入期间的离子束利用率
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Application No.: US14050952Application Date: 2013-10-10
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Publication No.: US09263231B2Publication Date: 2016-02-16
- Inventor: Shengwu Chang
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01L21/26 ; H01J37/244 ; H01L21/265 ; H01J37/317
Abstract:
An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate. The ion beam current sensor is disposed on a moveable support configured to move the ion beam current sensor in a first direction corresponding to the scanning of the ion beam while the substrate is moved in a second direction.
Public/Granted literature
- US20150104885A1 MOVEABLE CURRENT SENSOR FOR INCREASING ION BEAM UTILIZATION DURING ION IMPLANTATION Public/Granted day:2015-04-16
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