Invention Grant
- Patent Title: Sensing of plasma process parameters
- Patent Title (中): 感应等离子体工艺参数
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Application No.: US13641992Application Date: 2011-04-21
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Publication No.: US09263236B2Publication Date: 2016-02-16
- Inventor: Paul Scullin , David Gahan , Donal O'Sullivan
- Applicant: Paul Scullin , David Gahan , Donal O'Sullivan
- Applicant Address: IE Dublin
- Assignee: IMPEDANS LTD
- Current Assignee: IMPEDANS LTD
- Current Assignee Address: IE Dublin
- Agency: Whiteford, Taylor & Preston, LLP
- Agent Gregory M. Stone
- Priority: IES2010/0241 20100421
- International Application: PCT/EP2011/056460 WO 20110421
- International Announcement: WO2011/131769 WO 20111027
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; H01J37/32 ; C23C16/52 ; H01L21/66

Abstract:
A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space. The system further comprises a second transmission line coupler, arranged to be disposed outside the enclosed plasma processing space and coupled to the transmission line and a demodulator (550), connected to the second coupler, for receiving and demodulating the modulated signal.
Public/Granted literature
- US20130056155A1 SENSING OF PLASMA PROCESS PARAMETERS Public/Granted day:2013-03-07
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