Invention Grant
- Patent Title: Method of manufacturing a SiOCN film, substrate processing apparatus, and recording medium
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Application No.: US14026238Application Date: 2013-09-13
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Publication No.: US09263253B2Publication Date: 2016-02-16
- Inventor: Ryota Sasajima , Yoshinobu Nakamura
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2012-205073 20120918
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/30 ; C23C16/455 ; C23C16/52
Abstract:
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.
Public/Granted literature
- US20140080314A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2014-03-20
Information query
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