Invention Grant
- Patent Title: Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing
- Patent Title (中): 使用激光和快速热退火的组合，结晶非晶膜和晶粒生长
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Application No.: US14472825Application Date: 2014-08-29
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Publication No.: US09263265B2Publication Date: 2016-02-16
- Inventor: Shashank Sharma , Shankar Muthukrishnan , Abhilash J. Mayur
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/02 ; H01L21/324 ; H01L21/67
Abstract:
A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.
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Information query
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