Invention Grant
- Patent Title: Line width roughness improvement with noble gas plasma
- Patent Title (中): 惰性气体等离子体的线宽粗糙度改善
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Application No.: US14279114Application Date: 2014-05-15
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Publication No.: US09263284B2Publication Date: 2016-02-16
- Inventor: Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/308 ; H01L21/027 ; H01L21/311 ; H01L21/67
Abstract:
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist mask, ionizing the UV producing gas to produce UV rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask.
Public/Granted literature
- US20140248779A1 LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA Public/Granted day:2014-09-04
Information query
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