Invention Grant
- Patent Title: Flash memory structure and method for forming the same
- Patent Title (中): 闪存结构及其形成方法
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Application No.: US14152162Application Date: 2014-01-10
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Publication No.: US09263293B2Publication Date: 2016-02-16
- Inventor: Yu-Ling Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/311 ; H01L21/28 ; H01L21/3213 ; H01L21/3205 ; H01L29/66 ; H01L29/423 ; H01L29/788 ; H01L27/115
Abstract:
Embodiments of mechanisms of a semiconductor structure are provided. The semiconductor device structure includes a substrate and a floating gate having a first sidewall and a second sidewall formed over the substrate. The semiconductor device further includes an insulating layer formed over the substrate to cover the first sidewall and an upper portion of the second sidewall of the floating gate. The semiconductor device further includes a control gate formed over the insulating layer. In addition, the floating gate is formed in a shark's fin shape.
Public/Granted literature
- US20150200292A1 FLASH MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-07-16
Information query
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