Invention Grant
- Patent Title: Semiconductor device having parallel conductive lines including a cut portion and method of manufacturing the same
- Patent Title (中): 具有包括切割部分的平行导线的半导体器件及其制造方法
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Application No.: US14194433Application Date: 2014-02-28
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Publication No.: US09263323B2Publication Date: 2016-02-16
- Inventor: Masahisa Sonoda
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-107051 20130521
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L23/528
Abstract:
A semiconductor device includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction. The parallel conductive lines includes first and second lines that are adjacent, and a third line that is adjacent to the second line, and the first and third lines each have a cut portion at different points along the second direction.
Public/Granted literature
- US20140346677A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-11-27
Information query
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