Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor coupled across a low threshold GaN transistor, wherein a gate and a source of the low threshold GaN transistor are shorted with an interconnect metal to function as a parallel diode in a reverse mode. The high threshold GaN transistor is configured to provide noise immunity for the GaN switching device when in a forward mode. The high threshold GaN transistor and the low threshold GaN transistor are typically fabricated on the same substrate, and with significantly different thresholds. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.