Invention Grant
- Patent Title: Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment
- Patent Title (中): 半导体器件,半导体器件的制造方法,半导体晶片和电子设备
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Application No.: US14382091Application Date: 2013-03-04
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Publication No.: US09263488B2Publication Date: 2016-02-16
- Inventor: Toyotaka Kataoka
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Hazuki International, LLC
- Priority: JP2012-060546 20120316; JP2012-285320 20121227
- International Application: PCT/JP2013/055886 WO 20130304
- International Announcement: WO2013/137049 WO 20130919
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided. A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device is configured to include a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode.
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Information query
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