Invention Grant
- Patent Title: Semiconductor materials, apparatuses and methods
- Patent Title (中): 半导体材料,设备和方法
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Application No.: US13440714Application Date: 2012-04-05
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Publication No.: US09263524B2Publication Date: 2016-02-16
- Inventor: Peng Wei , Zhenan Bao , Benjamin D. Naab
- Applicant: Peng Wei , Zhenan Bao , Benjamin D. Naab
- Applicant Address: US CA Stanford
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Stanford
- Agency: Crawford Maunu PLLC
- Main IPC: H01L51/54
- IPC: H01L51/54 ; H01B1/12 ; H01L29/34 ; H01L21/322 ; H01L29/16 ; H01L29/778 ; B82Y30/00 ; B82Y40/00 ; H01L51/00 ; H01L51/05 ; B82Y10/00

Abstract:
Various methods and apparatuses involving salt-based compounds and related doping are provided. In accordance with one or more embodiments, a salt-based material is introduced to a semiconductor material, and is heated to generate a neutral compound that dopes the semiconductor material. Other embodiments are directed to semiconductor materials with such a neutral compound as an impurity that affects electrical characteristics therein.
Public/Granted literature
- US20120256296A1 SEMICONDUCTOR MATERIALS, APPARATUSES AND METHODS Public/Granted day:2012-10-11
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