Invention Grant
- Patent Title: High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections
- Patent Title (中): 高电压常关场效应晶体管包括具有多个相邻部分的通道
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Application No.: US13622379Application Date: 2012-09-19
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Publication No.: US09263533B2Publication Date: 2016-02-16
- Inventor: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/76 ; H01L29/788 ; H01L21/70 ; H01L29/02 ; H01L29/417 ; H01L29/423 ; H01L29/778 ; H01L29/20
Abstract:
A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
Public/Granted literature
- US20130069114A1 High-Voltage Normally-Off Field Effect Transistor Public/Granted day:2013-03-21
Information query
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