Invention Grant
- Patent Title: Simultaneous formation of source/drain openings with different profiles
- Patent Title (中): 同时形成不同型材的源/排水口
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Application No.: US14052160Application Date: 2013-10-11
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Publication No.: US09263551B2Publication Date: 2016-02-16
- Inventor: Eric Chih-Fang Liu , Srisuda Thitinun , Dai-Lin Wu , Ryan Chia-Jen Chen , Chao-Cheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/3213 ; H01L21/322 ; H01L29/66 ; H01L21/8238 ; H01L21/8234 ; H01L21/3065 ; H01L21/762
Abstract:
A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.
Public/Granted literature
- US20150104913A1 Simultaneous Formation of Source/Drain Openings with Different Profiles Public/Granted day:2015-04-16
Information query
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