Invention Grant
- Patent Title: Localized fin width scaling using a hydrogen anneal
- Patent Title (中): 使用氢退火进行局部翅片宽度缩放
-
Application No.: US13909602Application Date: 2013-06-04
-
Publication No.: US09263554B2Publication Date: 2016-02-16
- Inventor: Veeraraghavan S. Basker , Shogo Mochizuki , Tenko Yamashita , Chun-Chen Yeh
- Applicant: INTERNATiONAL BUSINESS MACHINES CORPORATION , Renesas Electronics Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78
Abstract:
Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width and round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins.
Public/Granted literature
- US20140353735A1 LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL Public/Granted day:2014-12-04
Information query
IPC分类:
