The reliability of a semiconductor device is improved. The semiconductor device includes a wire which is a conductive film pattern for a terminal formed over a first insulation film over a semiconductor substrate, a second insulation film formed over the first insulation film in such a manner as to cover the wire, and a nickel layer formed over the wire at a portion thereof exposed from an opening in the second insulation film. The wire is formed of a lamination film having a main conductor film containing aluminum as a main component, and a conductor film formed over the entire top surface of the main conductor film. The conductor film is formed of a titanium film, a tungsten film, or a titanium tungsten film. The nickel layer is formed over the conductor film at a portion thereof exposed from the opening.