Invention Grant
- Patent Title: Fin device with blocking layer in channel region
- Patent Title (中): 带通道区域的阻塞层的Fin器件
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Application No.: US14476830Application Date: 2014-09-04
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Publication No.: US09263587B1Publication Date: 2016-02-16
- Inventor: Ajey P. Jacob , Min-Hwa Chi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/78 ; H01L21/02 ; H01L29/66 ; H01L21/311 ; H01L29/16 ; H01L29/06 ; H01L21/8238 ; H01L21/84 ; H01L27/092
Abstract:
A method includes forming an ion implant layer in a fin defined on a semiconductor substrate. The semiconductor substrate is annealed to convert the ion implant layer to a dielectric layer. A gate electrode structure is formed above the fin in a channel region after forming the ion implant layer. The fin is recessed in a source/drain region. A semiconductor material is epitaxially grown in the source/drain region.
Public/Granted literature
- US20160071979A1 FIN DEVICE WITH BLOCKING LAYER IN CHANNEL REGION Public/Granted day:2016-03-10
Information query
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