Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14104929Application Date: 2013-12-12
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Publication No.: US09263593B2Publication Date: 2016-02-16
- Inventor: Tetsu Morooka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2013-165884 20130809
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L27/12
Abstract:
A semiconductor device according to an embodiment, includes a first dielectric film arranged above a gate electrode, an oxide semiconductor film arranged above the first dielectric film, a second dielectric film arranged above the oxide semiconductor film, a drain electrode having a drain contact portion that is arranged in the second dielectric film and connects one end side of the oxide semiconductor film to a wire of an upper layer, and a source electrode having a source contact portion that is arranged in the second dielectric film and connects another end side of the oxide semiconductor film to a wire of an upper layer. A wiring portion arranged above the second dielectric film and forming the wire of the upper layer is formed to overhang toward a center direction of the oxide semiconductor film on a source electrode side more than on a drain electrode side.
Public/Granted literature
- US20150041799A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-12
Information query
IPC分类:
