Invention Grant
- Patent Title: Method for making light emitting diodes
- Patent Title (中): 制造发光二极管的方法
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Application No.: US14700116Application Date: 2015-04-29
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Publication No.: US09263628B2Publication Date: 2016-02-16
- Inventor: Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210089073 20120330
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/22 ; H01L33/40 ; H01L33/24 ; H01L33/20

Abstract:
A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures is formed on the second semiconductor pre-layer and the patterned mask layer is removed. The substrate is removed and a first electrode is formed on a surface of the first semiconductor layer away from the active layer. A second electrode is formed to electrically connect with the second semiconductor pre-layer.
Public/Granted literature
- US20150243836A1 METHOD FOR MAKING LIGHT EMITTING DIODES Public/Granted day:2015-08-27
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