Invention Grant
- Patent Title: Plasmonic light emitting diode
- Patent Title (中): 等离子体发光二极管
-
Application No.: US13145995Application Date: 2009-01-30
-
Publication No.: US09263637B2Publication Date: 2016-02-16
- Inventor: Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
- Applicant: Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Patent Law Office of David Millers
- International Application: PCT/US2009/032698 WO 20090130
- International Announcement: WO2010/087851 WO 20100805
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/20 ; H01L33/02 ; H01L33/04 ; H01L33/38

Abstract:
A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
Public/Granted literature
- US20110272669A1 PLASMONIC LIGHT EMITTING DIODE Public/Granted day:2011-11-10
Information query
IPC分类: