Invention Grant
- Patent Title: ETCH bias homogenization
- Patent Title (中): ETCH偏倚均质化
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Application No.: US14303652Application Date: 2014-06-13
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Publication No.: US09263674B2Publication Date: 2016-02-16
- Inventor: Fabio Pellizzer , Hernan A. Castro , Eddie T. Flores
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; H01L27/10 ; H01L21/3213 ; H01L21/768

Abstract:
Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.
Public/Granted literature
- US20140339493A1 ETCH BIAS HOMOGENIZATION Public/Granted day:2014-11-20
Information query
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