Invention Grant
US09263686B2 Method of manufacturing organic thin film transistor having organic polymer insulating layer
有权
具有有机聚合物绝缘层的有机薄膜晶体管的制造方法
- Patent Title: Method of manufacturing organic thin film transistor having organic polymer insulating layer
- Patent Title (中): 具有有机聚合物绝缘层的有机薄膜晶体管的制造方法
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Application No.: US14354755Application Date: 2013-11-29
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Publication No.: US09263686B2Publication Date: 2016-02-16
- Inventor: Xianghua Wang , Xianfeng Xiong , Ze Liu , Longzhen Qiu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201310181851 20130516
- International Application: PCT/CN2013/088130 WO 20131129
- International Announcement: WO2014/183418 WO 20141120
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00 ; H01L51/10

Abstract:
An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material.
Public/Granted literature
- US20150001513A1 ORGANIC THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-01-01
Information query
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