Invention Grant
US09263696B2 Organic semiconductor component comprising a doped hole conductor layer
有权
有机半导体元件包括掺杂的空穴导体层
- Patent Title: Organic semiconductor component comprising a doped hole conductor layer
- Patent Title (中): 有机半导体元件包括掺杂的空穴导体层
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Application No.: US13982053Application Date: 2012-01-05
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Publication No.: US09263696B2Publication Date: 2016-02-16
- Inventor: Renate Kellermann , Anna Maltenberger , Günter Schmid , Jan Hauke Wemken
- Applicant: Renate Kellermann , Anna Maltenberger , Günter Schmid , Jan Hauke Wemken
- Applicant Address: DE Munich
- Assignee: SIEMENS AKTIENGESELLSCHAFT
- Current Assignee: SIEMENS AKTIENGESELLSCHAFT
- Current Assignee Address: DE Munich
- Agency: Staas & Halsey LLP
- Priority: DE102011003192 20110126
- International Application: PCT/EP2012/050117 WO 20120105
- International Announcement: WO2012/100972 WO 20120802
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/56 ; H01L51/00

Abstract:
An organic semiconductor component with a hole conductor layer having p-type doping with a superacid salt has greatly improved charged transport and optical properties. Besides increasing the specific conductivity at very low doping concentrations, the doping brings about substantially no negative change in the color impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.
Public/Granted literature
- US20140034934A1 ORGANIC SEMICONDUCTOR COMPONENT COMPRISING A DOPED HOLE CONDUCTOR LAYER Public/Granted day:2014-02-06
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