Invention Grant
- Patent Title: MOSFET gate driving circuit for transition softening
- Patent Title (中): 用于过渡软化的MOSFET栅极驱动电路
-
Application No.: US13868689Application Date: 2013-04-23
-
Publication No.: US09264035B2Publication Date: 2016-02-16
- Inventor: Daniel Tousignant , Daniel Landry
- Applicant: Honeywell International Inc.
- Applicant Address: US NJ Morris Plains
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morris Plains
- Agency: Seager, Tufte & Wickhem LLP
- Main IPC: H02H3/00
- IPC: H02H3/00 ; H03K17/725 ; H03K17/16 ; H03K17/687 ; H03K17/13

Abstract:
A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations. A unit may be designed so that there is enough power for a triggering a switch at about a cross over point of a waveform of input power to the unit. Power for triggering may come from a storage source rather than line power to reduce emissions on the power line. Power for the storage source may be provided with power stealing. Power stealing may require switching transistors which can generate emissions. Gate signals to the transistors may be especially shaped to keep emissions from transistor switching at a minimum.
Public/Granted literature
- US20140312696A1 MOSFET GATE DRIVING CIRCUIT FOR TRANSITION SOFTENING Public/Granted day:2014-10-23
Information query