Invention Grant
- Patent Title: Film forming method and processing system
- Patent Title (中): 成膜方法及加工系统
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Application No.: US13807079Application Date: 2011-06-24
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Publication No.: US09266146B2Publication Date: 2016-02-23
- Inventor: Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
- Applicant: Kenji Matsumoto , Shigetoshi Hosaka , Hitoshi Itoh
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2010-146880 20100628
- International Application: PCT/JP2011/064572 WO 20110624
- International Announcement: WO2012/002282 WO 20120105
- Main IPC: C23C16/00
- IPC: C23C16/00 ; B05D5/12 ; C23C16/40 ; H01L21/768 ; H01L23/532
Abstract:
A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
Public/Granted literature
- US20130136859A1 FILM FORMING METHOD AND PROCESSING SYSTEM Public/Granted day:2013-05-30
Information query
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