Invention Grant
- Patent Title: Method for making surface enhanced Raman scattering device
- Patent Title (中): 制造表面增强拉曼散射装置的方法
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Application No.: US13962583Application Date: 2013-08-08
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Publication No.: US09267894B2Publication Date: 2016-02-23
- Inventor: Masashi Ito , Katsumi Shibayama , Takashi Kasahara , Yoshihiro Maruyama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-178976 20120810
- Main IPC: H05K3/02
- IPC: H05K3/02 ; H05K3/10 ; G01N21/65

Abstract:
A method for making a surface enhanced Raman scattering device in accordance with one aspect of the present invention comprises a first step of forming a nanoimprint layer on a main surface of a wafer including a plurality of portions each corresponding to a substrate; a second step of transferring, by using a mold having a pattern corresponding to a fine structural part, the pattern to the nanoimprint layer after the first step, and thereby forming the formed layer including the fine structural part for each portion corresponding to the substrate; a third step of forming a conductor layer on the fine structural part after the second step; and a fourth step of cutting the wafer into each portion corresponding to the substrate after the second step.
Public/Granted literature
- US20140041217A1 METHOD FOR MAKING SURFACE ENHANCED RAMAN SCATTERING DEVICE Public/Granted day:2014-02-13
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