Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13532107Application Date: 2012-06-25
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Publication No.: US09269408B2Publication Date: 2016-02-23
- Inventor: Takashi Yamaki
- Applicant: Takashi Yamaki
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2011-159804 20110721
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/14 ; G11C7/22 ; G11C11/413 ; G11C11/417

Abstract:
In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block. A transmission path of the control signal is provided such that the control signal is inputted in parallel to the memory module via an inside-of-module path, and such that the control signal is outputted by a particular memory module of the memory modules via the inside-of-module path to a downstream outside-of-module path. The particular memory module in the memory block is selected such that it has a greater storage capacity than the other memory modules belonging to this same memory block have.
Public/Granted literature
- US20130021832A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-24
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