Invention Grant
- Patent Title: Bit cell write-assistance
- Patent Title (中): 位单元写入辅助
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Application No.: US13995434Application Date: 2011-10-18
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Publication No.: US09269409B2Publication Date: 2016-02-23
- Inventor: Maciej Bajkowski , Giao N. Pham , Novat S. Nintunze , Hung C. Ngo
- Applicant: Maciej Bajkowski , Giao N. Pham , Novat S. Nintunze , Hung C. Ngo
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Garrett IP, LLC
- International Application: PCT/US2011/056751 WO 20111018
- International Announcement: WO2013/058743 WO 20130425
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/00 ; G11C11/419 ; G06F12/00

Abstract:
Methods and systems to provide bit cell write-assist, including equalization of voltages of Bit and Bit nodes of a bit cell prior to a write operation. Equalization may be performed with a pulse-controlled transistor to transfer charge between the storage nodes. Pulse width and/or amplitude may be configurable, such as to scale with voltage. Bit cell write-assist may include reduction of bit cell retention strength during equalization, which may be continued during a write operation. Write-assist may be provided to each of multiple bit cells when a write operation is directed to a subset of the bit cells, which may conserve power and/or area. A partially-decoded address may be used to provide write-assistance to multiple bit cells prior to a write operation. Write-assistance may permit writing of Bit and Bit with a voltage swing significantly lower than an operating voltage of the bit cell.
Public/Granted literature
- US20130268737A1 BIT CELL WRITE-ASSISTANCE Public/Granted day:2013-10-10
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