Invention Grant
US09269419B2 Semiconductor memory device and semiconductor system including the same
有权
半导体存储器件和包括其的半导体系统
- Patent Title: Semiconductor memory device and semiconductor system including the same
- Patent Title (中): 半导体存储器件和包括其的半导体系统
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Application No.: US14106803Application Date: 2013-12-15
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Publication No.: US09269419B2Publication Date: 2016-02-23
- Inventor: Geun-Il Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0119167 20131007
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4076 ; G11C7/10 ; G11C11/4096 ; G11C11/4097

Abstract:
Disclosed herein is a semiconductor memory device using a pre-fetch method and a semiconductor system including the same. The semiconductor memory device may include a memory bank having an odd-numbered array region suitable for inputting/outputting data through N first local lines in response to an odd-numbered column address, and an even-numbered array region suitable for inputting/outputting data through N second local lines in response to an even-numbered column address, N being a positive integer, a column address generation unit suitable for consecutively generating the odd-numbered column address and the even-numbered column address whose generation sequence is controlled depending on whether an external column address has an even-numbered value or an odd-numbered value, and N global lines coupled in common to the N first local lines and the N second local lines, suitable for inputting/outputting data.
Public/Granted literature
- US20150098282A1 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME Public/Granted day:2015-04-09
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