Invention Grant
US09269458B2 Semiconductor device enabling refreshing of redundant memory cell instead of defective memory cell
有权
半导体器件能够刷新冗余存储器单元而不是有缺陷的存储器单元
- Patent Title: Semiconductor device enabling refreshing of redundant memory cell instead of defective memory cell
- Patent Title (中): 半导体器件能够刷新冗余存储器单元而不是有缺陷的存储器单元
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Application No.: US14531311Application Date: 2014-11-03
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Publication No.: US09269458B2Publication Date: 2016-02-23
- Inventor: Yuki Hosoe
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2010-048818 20100305
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/08 ; G11C29/04 ; G11C11/406

Abstract:
A semiconductor device includes memory blocks MB1 and MB2 and redundancy determination circuit 25 that can enter a normal operation mode that accesses either memory block MB1 or memory block MB2 and a refresh mode that simultaneously accesses both memory block MB1 and memory block MB2. In response to normal memory cell NMC that belongs to at least one of memory blocks MB1 and MB2 being replaced by redundant memory cell RMC in the refresh mode, redundancy determination circuit 25 deactivates normal cell area NCA to which normal memory cell NMC that is a source of replacement belongs, and activates redundant cell area RCA to which redundant memory cell RMC that is to be replaced belongs and normal cell area NCA to which normal memory cell NMC that is not being replaced belongs.
Public/Granted literature
- US20150049564A1 SEMICONDUCTOR DEVICE ENABLING REFRESHING OF REDUNDANT MEMORY CELL INSTEAD OF DEFECTIVE MEMORY CELL Public/Granted day:2015-02-19
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