Invention Grant
US09269497B2 Integrated capacitively-coupled bias circuit for RF MEMS switches
有权
用于RF MEMS开关的集成电容耦合偏置电路
- Patent Title: Integrated capacitively-coupled bias circuit for RF MEMS switches
- Patent Title (中): 用于RF MEMS开关的集成电容耦合偏置电路
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Application No.: US14292598Application Date: 2014-05-30
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Publication No.: US09269497B2Publication Date: 2016-02-23
- Inventor: Francis J. Morris
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01G5/16
- IPC: H01G5/16 ; H01H59/00 ; H01L29/92 ; H01L49/02 ; H01L29/66

Abstract:
A switchable capacitor including a first electrode, a dielectric layer on the first electrode, a second electrode configured to be suspended in an undeflected position over the dielectric layer in a de-activated state, and to deflect toward the first electrode in an activated state in response to a voltage difference between the two electrodes, a gap between the second electrode and the dielectric layer in the activated state being less than a corresponding gap in the de-activated state, and a capacitor having a first and second end, coupled to one of the electrodes at the first end, and configured to reduce the voltage difference between the electrodes as the second electrode deflects toward the first electrode in the activated state, wherein the voltage difference between the electrodes corresponds to a bias voltage applied across the second end of the capacitor and an other one of the first and second electrodes.
Public/Granted literature
- US20150348714A1 INTEGRATED CAPACITIVELY-COUPLED BIAS CIRCUIT FOR RF MEMS SWITCHES Public/Granted day:2015-12-03
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