Invention Grant
- Patent Title: Methods for forming interconnect structure utilizing selective protection process for hardmask removal process
- Patent Title (中): 使用硬掩模去除工艺的选择性保护工艺形成互连结构的方法
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Application No.: US14298102Application Date: 2014-06-06
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Publication No.: US09269563B2Publication Date: 2016-02-23
- Inventor: He Ren , Mehul B. Naik
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00 ; H01L21/033
Abstract:
Methods and apparatuses for forming a dual damascene structure utilizing a selective protection process to protect vias and/or trenches in the dual damascene structure while removing a hardmask layer from the dual damascene structure. In one embodiment, a method for removing a patterned hardmask layer from a substrate includes forming an organic polymer material on a dual damascene structure that exposes substantially a patterned hardmask layer disposed on an upper surface of the dual damascene structure, removing the patterned hardmask layer on the substrate, and removing the organic polymer material from the substrate.
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