Invention Grant
US09269580B2 Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
有权
具有增加的沟道迁移率的半导体器件和用于其制造的干法化学工艺
- Patent Title: Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
- Patent Title (中): 具有增加的沟道迁移率的半导体器件和用于其制造的干法化学工艺
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Application No.: US13229276Application Date: 2011-09-09
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Publication No.: US09269580B2Publication Date: 2016-02-23
- Inventor: Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
- Applicant: Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agent Anthony J. Josephson
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/78 ; H01L21/28 ; H01L21/04 ; H01L21/02 ; H01L29/739 ; H01L29/06 ; H01L29/16
Abstract:
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
Public/Granted literature
- US20120326163A1 SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY AND DRY CHEMISTRY PROCESSES FOR FABRICATION THEREOF Public/Granted day:2012-12-27
Information query
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