Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14539906Application Date: 2014-11-12
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Publication No.: US09269618B2Publication Date: 2016-02-23
- Inventor: Hyung Jin Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0094223 20120828
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/321 ; H01L21/3205 ; H01L21/02 ; H01L21/311 ; H01L29/423 ; H01L27/08 ; H01L49/02 ; H01L27/108
Abstract:
A semiconductor device comprises a bit line formed over a semiconductor substrate. The bit line has an upper portion and a lower portion, and the upper portion is narrower than the lower portion. An barrier film is formed over sidewalls of the bit line, and a storage node contact plug is obtained by filling a space between the bit lines so that an upper portion of the storage node contact is wider than a lower portion of the storage node contact. As a result, the process can be simplified and a short between the storage node contact plug and the bit line can be prevented.
Public/Granted literature
- US20150072513A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
IPC分类:
