Invention Grant
- Patent Title: Fin cut on SIT level
- Patent Title (中): 削减SIT水平
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Application No.: US14501654Application Date: 2014-09-30
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Publication No.: US09269627B1Publication Date: 2016-02-23
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L21/02 ; H01L21/027 ; H01L21/306
Abstract:
A method of forming semiconductor fins with variable pitches of arbitrary values in a sidewall image transfer (SIT) process is provided. After forming an array of first mandrel structures with a constant pitch and removing at least one first mandrel structure form the array, a set of second mandrel structures are formed overlapping the first mandrel structures. The combination of the first mandrel structures and the second mandrel structures defines pitches of sidewall spacer patterns to be subsequently formed.
Information query
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