The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.