Invention Grant
- Patent Title: Method of forming bump structure
- Patent Title (中): 形成凸块结构的方法
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Application No.: US13778969Application Date: 2013-02-27
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Publication No.: US09269682B2Publication Date: 2016-02-23
- Inventor: Tsung-Yuan Yu , Hsien-Wei Chen , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A method of forming a bump structure includes forming a metallization layer on a top metal layer by electroless plating process, forming a polymer layer over the metallization layer; forming an opening on the polymer layer to expose the metallization layer, and forming a solder bump over the exposed metallization layer to make electrical contact with the top metal layer.
Public/Granted literature
- US20140242791A1 METHOD OF FORMING BUMP STRUCTURE Public/Granted day:2014-08-28
Information query
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