Invention Grant
- Patent Title: Access-resistant diode array device having enhanced stability
- Patent Title (中): 具有增强的稳定性的耐二极管阵列器件
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Application No.: US14361177Application Date: 2012-11-26
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Publication No.: US09269739B2Publication Date: 2016-02-23
- Inventor: Laurent Mollard , Nicolas Baier , Johan Rothman
- Applicant: Commissariat a l'energie atomique et aux ene alt
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1103618 20111128
- International Application: PCT/EP2012/073632 WO 20121126
- International Announcement: WO2013/079447 WO 20130606
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/032
Abstract:
A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.
Public/Granted literature
- US20140339570A1 ACCESS-RESISTANT DIODE ARRAY DEVICE HAVING ENHANCED STABILITY Public/Granted day:2014-11-20
Information query
IPC分类:
