Invention Grant
- Patent Title: Cover glass for semiconductor package and production method thereof
- Patent Title (中): 半导体封装用盖玻璃及其制造方法
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Application No.: US13821622Application Date: 2011-09-08
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Publication No.: US09269742B2Publication Date: 2016-02-23
- Inventor: Takako Komai , Takashi Murata , Masahiro Yodogawa
- Applicant: Takako Komai , Takashi Murata , Masahiro Yodogawa
- Applicant Address: JP Otsu-shi, Shiga
- Assignee: NIPPON ELECTRIC GLASS CO., LTD.
- Current Assignee: NIPPON ELECTRIC GLASS CO., LTD.
- Current Assignee Address: JP Otsu-shi, Shiga
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2010-201630 20100909
- International Application: PCT/JP2011/070480 WO 20110908
- International Announcement: WO2012/033161 WO 20120315
- Main IPC: C03C3/091
- IPC: C03C3/091 ; C03C3/087 ; C03C3/085 ; H01L27/146 ; C03C1/00

Abstract:
A cover glass for semiconductor package having thermal expansion coefficient conformable to plastic packages and allowing accurate detection of existence of foreign substances, dusts, etc. in an imaging test always having a low emission amount of alpha-ray, and a related production method. The cover glass comprises, in terms of percentage by mass, of from 58 to 75% of SiO2, of from 1.1 to 20% of Al2O3, of from 0 to 10% of B2O3, of from 0.1 to 20% of Na2O, of from 0 to 11% of K2O, and of from 0 to 20% of alkaline earth metal oxide. The cover glass has average thermal expansion coefficient of from 90 to 180×10−7/° C. in the temperature range of from 30 to 380° C., a Young's modulus of 68 GPa or more, and an emission amount of alpha-ray from the glass of 0.05 c/cm2·hr or less.
Public/Granted literature
- US20130165312A1 COVER GLASS FOR SEMICONDUCTOR PACKAGE AND PRODUCTION METHOD THEREOF Public/Granted day:2013-06-27
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