Invention Grant
- Patent Title: Photovoltaic device including a back contact and method of manufacturing
- Patent Title (中): 包括背面接触和制造方法的光伏器件
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Application No.: US14221245Application Date: 2014-03-20
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Publication No.: US09269849B2Publication Date: 2016-02-23
- Inventor: San Yu , Veluchamy Palaniappagounder , Pratima Addepalli , Imran Khan
- Applicant: First Solar, Inc.
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/18 ; H01L31/0224 ; H01L31/0336 ; H01L31/073

Abstract:
A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
Public/Granted literature
- US20140284750A1 Photovoltaic Device Including A Back Contact And Method Of Manufacturing Public/Granted day:2014-09-25
Information query
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