Invention Grant
US09269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
有权
磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
- Patent Title: Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
- Patent Title (中): 磁阻效应元件具有移位消除层，其图案面积大于存储层的图案面积
-
Application No.: US14014210Application Date: 2013-08-29
-
Publication No.: US09269890B2Publication Date: 2016-02-23
- Inventor: Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
- Applicant: Masahiko Nakayama , Toshihiko Nagase , Tadashi Kai , Youngmin Eeh , Koji Ueda , Yutaka Hashimoto , Daisuke Watanabe , Kazuya Sawada
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; H01F10/32 ; H01F41/32
Abstract:
According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.
Public/Granted literature
- US20140284735A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2014-09-25
Information query
IPC分类:
